Single-layer resist

(updated 02-01-2010)

  • 5 min prebake 115°C
  • spin S1813 photoresist at 4000 rpm for 30 sec
  • 3 min bake 115°C (microchem says this is too long)
  • 6 sec exposure
    • Quartz exposure: Place a dummy SiO2 substrate upside down (rough side up) with the quartz on top in the contact aligner. The Si layer underneath the quartz will help simulate SiO2 chip conditions.
  • 40 sec develop
    • developer solution: 4 parts DI H20, 1 part MF-351 developer

Bilayer Resist

(updated 02-09-2009)

  • 5 min prebake 115°C
  • spin LOR3B photoresist at 2500 rpm for 45 sec
    • Deposits ~350 nm of photoresist (according to LOR3B documentation)
  • 2 min bake 190°C
  • spin S1813 photoresist at 4000 rpm for 30 sec
  • 2 min bake 115°C
  • 5 sec exposure
  • 20 sec develop
    • Developing solution: Shipley Mircoposit CD-26
    • No agitation
  • 10 sec DI H2O bath
    • No agitation
  • deposit 35nm metal
  • remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
    • Put chips in 70°C remover for ~15 min
    • Transfer to fresh 70°C remover for ~20 min
    • Transfer to fresh 70°C remover for ~25 min
  • rinse with acetone, IPA then blow dry

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